Putungan, Darwin B., M. S.

dbp   Position: Associate Professor 1
 
Specialization: Computational Physics/ Materials
 
Research GroupComputational Physics
 
Email Address: darwinbputungan@gmaildotcom
 

Publications

  • Albao, M. A., Hsu, C.-H., Putungan, D. B., and F.-C. Chuang. “Room-temperature deposition of group III metals on Si(100): Comparative Studies of Nuclation Behavior”. Surface Science 604 (2010) 396-403.
  • Putungan, D. B., and M. U. Herrera. “Study of Band Gap Surface States of Silicon in MOSFET using Surface Photovoltage Spectroscopy (SPS)”. Journal of Physics: Conference Series, Vol. 28, 70-73, 2006. ISSN – 1742-6568 (Print) 1742-5496 (Online)*.
  • Albao, M. A., Hsu, C.-H., Putungan, D. B., and F.-C. Chuang. “Role of Interfacial Hydrogen in Enhanced Nucleation of Al Islands on Si (100): A Combined Density Functional Theory and Kinetic Monte Carlo Study”. Under preparation.
  • Putungan, D. B., Ramos, H. J., and Albao, M. A. “Modeling of co-deposition of In and Sn on Si(100): A Kinetic Monte Carlo Study”. Submitted to Computational Materials Science journal.

Last Updated on Friday, 10 April 2015 09:06

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